Enhance your understanding of high-voltage Schottky and p-n diodes with the "High Voltage Schottky and p-n Diodes" course. This advanced study covers the semiconductor physics, device characteristics, and SPICE modeling, providing valuable insights for graduate students and professionals interested in power electronics and semiconductor devices.
Throughout the course, you will delve into the intricate concepts related to semiconductor crystals, energy bands, carrier densities, drift-diffusion models, metal-semiconductor junctions, diode current, breakdown mechanisms, and SPICE modeling. Furthermore, the course explores the power diode losses, including on-state and switching losses, in convertor circuits, offering a comprehensive comparison between silicon p-n diodes and 4H-SiC Schottky diodes.
By the end of the course, you will have gained a detailed understanding of high-voltage Schottky and p-n diodes, enabling you to calculate key diode parameters based on their physical structure and construct SPICE models for these essential semiconductor devices.
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The "High Voltage Schottky and p-n Diodes" course modules cover semiconductor physics background, Schottky diodes, p-n diodes, and power diode losses. Delve into essential topics such as energy bands, carrier transport, breakdown mechanisms, and comparative analysis of diode losses.
Explore the foundational concepts of semiconductor physics, including semiconductor crystals, energy bands, carrier densities, and drift-diffusion models. Gain an in-depth understanding of the physics background required for analyzing semiconductor devices.
Delve into the intricate details of Schottky diodes, covering metal-semiconductor junctions, electrostatic analysis, diode current, breakdown mechanisms, and SPICE modeling. Gain comprehensive insights into the structure, operation, and modeling of Schottky diodes.
Gain a thorough understanding of p-n diodes, including their structure, electrostatic analysis, diode current, minority carrier storage, diffusion capacitance, and SPICE modeling. Explore the essential characteristics and modeling aspects of p-n diodes in power electronics applications.
Examine the intricacies of power diode losses, including diode resistance versus breakdown voltage and switching losses. Compare the characteristics and performance of 4H-SiC Schottky diodes with silicon p-n diodes in convertor circuits, gaining valuable insights into diode losses in power electronics applications.
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