This comprehensive course delves into the analysis and characteristics of metal-oxide-semiconductor (MOS) devices, MOS field effect transistors (MOSFETs), and bipolar junction transistors (BJTs). Students will gain a deep understanding of equilibrium characteristics, modes of operation, switching, and current amplifying behaviors of these vital semiconductor devices.
Through engaging modules, individuals will explore MOS at equilibrium, basic and advanced operation of MOSFETs, short channel effects, and the frequency response of BJTs. The course provides a solid foundation in materials and physical constants, equation sheets, and homework assignments to reinforce learning.
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This course comprises three modules that cover metal-oxide-semiconductor (MOS) devices, MOS field effect transistors (MOSFETs), and bipolar junction transistors (BJTs). Each module provides comprehensive insights into the operation and analysis of these semiconductor components.
Module 1 explores the equilibrium characteristics and analysis of metal-oxide-semiconductor (MOS) devices, including topics such as MOS at equilibrium, basic operation, non-equilibrium behavior, and non-ideal MOS. The module also covers capacitance-voltage characteristics and offers suggested textbooks for further reference.
Module 2 provides a detailed understanding of MOS field effect transistors (MOSFETs), encompassing their basic and advanced operations, short channel effects, and relevant materials and physical constants. The module incorporates equation sheets and homework assignments to reinforce learning.
Module 3 delves into the analysis of bipolar junction transistors (BJTs), covering base-emitter current, basic operation, heterojunction bipolar transistors (HBTs), non-ideal behavior, frequency response, and the impact of recombination in the base. The module also includes materials and physical constants, equation sheets, and homework assignments.
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